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cy7c1471v25 72-mbit (2 m 36) flow-through sram with nobl? architecture cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 38-05287 rev. *p revised june 24, 2013 72-mbit (2 m 36) flow-through sram with nobl? architecture features no bus latency? (nobl?) arch itecture eliminates dead cycles between write and read cycles supports up to 133 mhz bus operations with zero wait states data is transferred on every clock pin compatible and functionally equivalent to zbt? devices internally self timed output buf fer control to eliminate the need to use oe registered inputs for flow through operation byte write capability 2.5 v i/o supply (v ddq ) fast clock-to-output times ? 6.5 ns (for 133-mhz device) clock enable (cen ) pin to enable clock and suspend operation synchronous self timed writes asynchronous output enable (oe ) cy7c1471v25 available in jedec-standard pb-free 100-pin tqfp three chip enables (ce 1 , ce 2 , ce 3 ) for simple depth expansion. automatic power-down feature av ailable using zz mode or ce deselect. burst capability ? linear or interleaved burst order low standby power functional description the cy7c1471v25 are 2.5 v, 2 m 36 synchronous flow through burst srams designed spec ifically to support unlimited true back-to-back read or write op erations without the insertion of wait states. the cy7c1471v25 are equipped with the advanced no bus latency (nobl) logic required to enable consecutive read or write oper ations with data transferred on every clock cycle. this feature dramatically improves the throughput of data through the sram, especially in systems that require frequent write-read transitions. all synchronous inputs pass through input registers controlled by the rising edge of the clock. the clock input is qualified by the clock enable (cen ) signal, which when deasserted suspends operation and extends the previous clock cycle. maximum access delay from the clock ri se is 6.5 ns (133-mhz device). write operations are controlled by two or four byte write select (bw x ) and a write enable (we ) input. all writes are conducted with on-chip synchronous self timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) provide easy bank selection and output tristate control. to avoid bus contention, the output drivers are synchronously tristated during the data portion of a write sequence. selection guide description 133 mhz unit maximum access time 6.5 ns maximum operating current 305 ma maximum cmos standby current 120 ma errata: for information on silicon errata, see "errata" on page 19. details include trigger conditions, devices affected, and proposed workaround.
cy7c1471v25 document number: 38-05287 rev. *p page 2 of 23 logic block diagram ? cy7c1471v25 c mode bw a bw b we ce1 ce2 ce3 oe read logic dqs dqp a dqp b dqp c dqp d memory array e input register bw c bw d address register write registry and data coherency control logic burst logic a0' a1' d1 d0 q1 q0 a0 a1 adv/ld ce adv/ld c clk cen write drivers d a t a s t e e r i n g s e n s e a m p s write address register a0, a1, a o u t p u t b u f f e r s e zz sleep control
cy7c1471v25 document number: 38-05287 rev. *p page 3 of 23 contents pin configurations ........................................................... 4 pin definitions .................................................................. 5 functional overview ........................................................ 6 single read accesses ................................................ 6 burst read accesses .................................................. 6 single write accesses ................................................. 6 burst write accesses .................................................. 6 sleep mode ................................................................. 6 interleaved burst address tabl e ................................. 7 linear burst address table ......................................... 7 zz mode electrical characteri stics .............................. 7 truth table ........................................................................ 8 truth table for read/write .............................................. 9 maximum ratings ........................................................... 10 operating range ............................................................. 10 electrical characteristics ............................................... 10 capacitance .................................................................... 11 thermal resistance ........................................................ 11 ac test loads and waveforms ..................................... 11 switching characteristics .............................................. 12 switching waveforms .................................................... 13 ordering information ...................................................... 16 ordering code definitions ..... .................................... 16 package diagrams .......................................................... 17 acronyms ........................................................................ 18 document conventions ................................................. 18 units of measure ....................................................... 18 errata ............................................................................... 19 part numbers affected .............................................. 19 product status ........................................................... 19 ram9 sync/nobl zz pin issues errata summary .... 19 document history page ................................................. 20 sales, solutions, and legal information ...................... 23 worldwide sales and design s upport ......... .............. 23 products .................................................................... 23 psoc? solutions ...................................................... 23 cypress developer community ................................. 23 technical support ................. .................................... 23
cy7c1471v25 document number: 38-05287 rev. *p page 4 of 23 pin configurations figure 1. 100-pin tqfp (14 20 1.4 mm) pinout [1] cy7c1471v25 a a a a a1 a0 nc/288m nc/144m v ss v dd a a a a a a dqp b dq b dq b v ddq v ss dq b dq b dq b dq b v ss v ddq dq b dq b v ss nc v dd dq a dq a v ddq v ss dq a dq a dq a dq a v ss v ddq dq a dq a dqp a dqp c dq c dq c v ddq v ss dq c dq c dq c dq c v ss v ddq dq c dq c nc v dd nc v ss dq d dq d v ddq v ss dq d dq d dq d dq d v ss v ddq dq d dq d dqp d a a ce 1 ce 2 bw d bw c bw b bw a ce 3 v dd v ss clk we cen oe a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 a a adv/ld zz mode a byte a byte b byte d byte c a a note 1. errata: the zz pin (pin 64) needs to be externally connected to ground. for more information, see "errata" on page 19.
cy7c1471v25 document number: 38-05287 rev. *p page 5 of 23 pin definitions name i/o description a 0 , a 1 , a input- synchronous address inputs used to select one of the address locations . sampled at the rising edge of the clk. a [1:0] are fed to the tw o-bit burst counter. bw a , bw b , bw c , bw d input- synchronous byte write inputs, active low. qualified with we to conduct writes to the sram. sampled on the rising edge of clk. we input- synchronous write enable input, active low . sampled on the rising edge of clk if cen is active low. this signal must be asserted low to initiate a write sequence. adv/ld input- synchronous advance/load input . used to advance the on-chip address co unter or load a new address. when high (and cen is asserted low) the inter nal burst counter is advanced. when low, a new address can be loaded into the device for an access. after being deselected, adv/ld must be driven low to load a new address. clk input- clock clock input . captures all synchronous inputs to the device. clk is qualified with cen . clk is only recognized if cen is active low. ce 1 input- synchronous chip enable 1 input, active low . sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select or de select the device. ce 2 input- synchronous chip enable 2 input, active high . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select or de select the device. ce 3 input- synchronous chip enable 3 input, active low . sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select or dese lect the device. oe input- asynchronous output enable, asynchronous input, active low . combined with the synchronous logic block inside the device to control the direction of the i/o pins . when low, the i/o pins are enabled to behave as outputs. when deasserted high, i/o pins are tristated, and act as input data pins. oe is masked during the data portion of a write sequenc e, during the first clock when emergi ng from a deselected state, when the device has been deselected. cen input- synchronous clock enable input, active low . when asserted low the clock signal is recognized by the sram. when deasserted high the clock signal is masked. because deasserting cen does not deselect the device, cen can be used to extend the previous cycle when required. zz [2] input- asynchronous zz ?sleep? input . this active high input places the device in a non-time-critical ?sleep? condition with data integrity preserved. for normal operation, this pin has to be low or left floating. zz pin has an internal pull-down. dq s i/o- synchronous bidirectional data i/o lines . as inputs, they feed into an on-chip da ta register that is triggered by the rising edge of clk. as outputs, t hey deliver the data contained in t he memory location specified by the addresses presented during the previous clock rise of the read cycle. the direction of the pins is controlled by oe . when oe is asserted low, the pins behave as outputs. when high, dq s and dqp x are placed in a tristate condition. the outputs are automatically tristat ed during the data portion of a write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of oe . dqp x i/o- synchronous bidirectional data parity i/o lines. functionally, these signals are identical to dq s . during write sequences, dqp x is controlled by bw x correspondingly. mode input strap pin mode input. selects the burst order of the device. when ti ed to gnd selects linear burst sequence. when tied to v dd or left floating selects interleaved burst sequence. v dd power supply power supply inputs to the core of the device . v ddq i/o power supply power supply for the i/o circuitry . v ss ground ground for the device . nc ? no connects . not internally connected to the die. 144 m, 288m, 576m, and 1g are address expansion pins and are not internally connected to the die. note 2. errata: the zz pin (pin 64) needs to be externally connected to ground. for more information, see "errata" on page 19.
cy7c1471v25 document number: 38-05287 rev. *p page 6 of 23 functional overview the cy7c1471v25 are synchronous flow through burst srams designed specifically to eliminate wait states during write-read transitions. all synchronous inputs pass through input registers controlled by the rising edge of the clock. the clock signal is qualified with the clock enable input signal (cen ). if cen is high, the clock signal is not recognized and all internal states are maintained. all synchronous operations are qualified with cen . maximum access delay from the clock rise (t cdv ) is 6.5 ns (133-mhz device). accesses are initiated by asserting all three chip enables (ce 1 , ce 2 , ce 3 ) active at the rising edge of the clock. if cen is active low and adv/ld is asserted low, the address presented to the device is latched. the access can either be a read or write operation, depending on the st atus of the write enable (we ). byte write select (bw x ) can be used to conduct byte write operations. write operations ar e qualified by the we . all writes are simplified with on-chip synchronous self timed write circuitry. three synchronous chip enables (ce 1 , ce 2 , ce 3 ) and an asynchronous output enable (oe ) simplify depth expansion. all operations (reads, writes, and de selects) are pipelined. adv/ld must be driven low after the dev ice is deselected to load a new address for the next operation. single read accesses a read access is initiated when the following conditions are satisfied at clock rise: (1) cen is asserted low, (2) ce 1 , ce 2 , and ce 3 are all asserted active, (3) we is deasserted high, and (4) adv/ld is asserted low. the address presented to the address inputs is latched into the address register and presented to the memory array and control logic. the control logic determines that a read access is in progress and allows the requested data to propagate to the output buffers. the data is available within 6.5 ns (133-mhz device) provided oe is active low. after the first clock of the read access, the output buffers are controlled by oe and the internal control logic. oe must be driven low to drive out the reque sted data. on the subsequent clock, another operation (read/wr ite/deselect) can be initiated. when the sram is deselected at clock rise by one of the chip enable signals, the output is tristated immediately. burst read accesses the cy7c1471v25 has an on-chip burst counter that enables the user the ability to supply a single address and conduct up to four reads without reasserti ng the address inputs. adv/ld must be driven low to load a new address into the sram, as described in the single read accesses section. the sequence of the burst counter is determin ed by the mode input signal. a low input on mode selects a linear burst mode, a high selects an interleaved burst sequence. both burst counters use a0 and a1 in the burst sequence, and wraps around when incremented sufficiently. a high input on adv/ld increments the internal burst counter regardless of the state of chip enable inputs or we . we is latched at the beginning of a burst cycle. therefore, the type of access (read or write) is maintained throughout the burst sequence. single write accesses write accesses are initiated when these conditions are satisfied at clock rise: cen is asserted low ce 1 , ce 2 , and ce 3 are all asserted active we is asserted low. the address presented to the address bus is loaded into the address register. the write signals are latched into the control logic block. the data lines are automatically tristated regardless of the state of the oe input signal. this allows the external logic to present the data on dqs and dqp x . on the next clock rise the data presented to dqs and dqp x (or a subset for byte write operations, see "truth table for read/write" on page 9 for details) inputs is latched into the device and the write is complete. additional accesses (read/write/desel ect) can be initiated on this cycle. the data written during the writ e operation is controlled by bw x signals. the cy7c1471v25 provide byte write capability that is described in the "truth table for read/write" on page 9. the input we with the selected bw x input selectively writes to only the desired bytes. bytes not selected during a byte write operation remain unaltered. a synchronous self timed write mechanism is provided to simp lify the write operations. byte write capability is included to greatly simplify read/modify/write sequences, which can be reduced to simple byte write opera- tions. because the cy7c1471v25 are common i/o devices, data must not be driven into the device while the outputs are active. the oe can be deasserted high before presenting data to the dqs and dqp x inputs. this tristates the output drivers. as a safety precaution, dqs and dqp x are automatically tristated during the data portion of a write cycle, regardless of the state of oe . burst write accesses the cy7c1471v25 have an on-chip burst counter that enables the user to supply a single address and conduct up to four write operations without reassertin g the address inputs. adv/ld must be driven low to load the initial address, as described in the single write accesses section. when adv/ld is driven high on the subsequent clock rise, the chip enables (ce 1 , ce 2 , and ce 3 ) and we inputs are ignored and the bur st counter is incremented. the correct bw x inputs must be driven in each cycle of the burst write, to write the correct bytes of data. sleep mode the zz input pin is an asynchronous input. asserting zz places the sram in a power conservation ?sleep? mode. two clock cycles are required to enter into or exit from this ?sleep? mode. while in this mode, data inte grity is guaranteed. accesses pending when entering the ?sleep? mode are not considered valid nor is the completion of the operation guaranteed. the device must be deselected before entering the ?sleep? mode. ce 1 , ce 2 , and ce 3 , must remain inactive for the duration of t zzrec after the zz input returns low.
cy7c1471v25 document number: 38-05287 rev. *p page 7 of 23 interleaved burst address table (mode = floating or v dd ) first address a1:a0 second address a1:a0 third address a1:a0 fourth address a1:a0 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst address table (mode = gnd) first address a1:a0 second address a1:a0 third address a1:a0 fourth address a1:a0 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 zz mode electrical characteristics parameter description test conditions min max unit i ddzz sleep mode standby current zz > v dd ? ? 0.2 v ? 120 ma t zzs device operation to zz zz > v dd ? 0.2 v ? 2t cyc ns t zzrec zz recovery time zz < 0.2 v 2t cyc ?ns t zzi zz active to sleep current th is parameter is sampled ? 2t cyc ns t rzzi zz inactive to exit sleep current this parameter is sampled 0 ? ns
cy7c1471v25 document number: 38-05287 rev. *p page 8 of 23 truth table the truth table for cy7c1471v25 follows. [3, 4, 5, 6, 7, 8, 9] operation address used ce 1 ce 2 ce 3 zz adv/ld we bw x oe cen clk dq deselect cycle none h x x l l x x x l l->h tristate deselect cycle none x x h l l x x x l l->h tristate deselect cycle none x l x l l x x x l l->h tristate continue deselect cycle none x x x l h x x x l l->h tristate read cycle (begin burst) extern al l h l l l h x l l l->h data out (q) read cycle (continue burst) next x x x l h x x l l l->h data out (q) nop/dummy read (begin burst) external l h l l l h x h l l->h tristate dummy read (continue burst) next x x x l h x x h l l->h tristate write cycle (begin burst) exter nal l h l l l l l x l l->h data in (d) write cycle (continue burst) next x x x l h x l x l l->h data in (d) nop/write abort (begin burst ) none l h l l l l h x l l->h tristate write abort (continue burst) next x x x l h x h x l l->h tristate ignore clock edge (stall) current x x x l x x x x h l->h ? sleep mode none x x xh x xxxx x tristate notes 3. x = ?don't care.? h = logic high, l = logic low. bw x = l signifies at least one byte write select is active, bw x = valid signifies that the desired byte write selects are asserted, see "truth table for read/write" on page 9 for details. 4. write is defined by bw x , and we . see "truth table for read/write" on page 9. 5. when a write cycle is detected, all i/os are tristated, even during byte writes. 6. the dqs and dqp x pins are controlled by the current cycle and the oe signal. oe is asynchronous and is not sampled with the clock. 7. cen = h, inserts wait states. 8. device powers up deselected with the i/os in a tristate condition, regardless of oe . 9. oe is asynchronous and is not sampled with the clock rise. it is masked internally during writ e cycles. during a read cycle dqs a nd dqp x = tristate when oe is inactive or when the device is deselected, and dqs and dqp x = data when oe is active.
cy7c1471v25 document number: 38-05287 rev. *p page 9 of 23 truth table for read/write the read-write truth table for cy7c1471v25 follows. [10, 11, 12] function we bw a bw b bw c bw d read h x x x x write no bytes written l h h h h write byte a ? (dq a and dqp a )llhhh write byte b ? (dq b and dqp b )lhlhh write byte c ? (dq c and dqp c )lhhlh write byte d ? (dq d and dqp d )lhhhl write all bytes lllll notes 10. x = ?don't care.? h = logic high, l = logic low. bw x = l signifies at least one byte write select is active, bw x = valid signifies that the desired byte write selects are asserted, see "truth table for read/write" on page 9 for details. 11. write is defined by bw x , and we . see "truth table for read/write" on page 9. 12. table lists only a partial listing of the byte write combinations. any combination of bw x is valid. appropriate write is bas ed on which byte write is active.
cy7c1471v25 document number: 38-05287 rev. *p page 10 of 23 maximum ratings exceeding maximum ratings may impair the useful life of the device. these user guidelines are not tested. storage temperature ..... ............ ............... ?65 ? c to +150 ? c ambient temperature with power applied .... .............. .............. .......... ?55 ? c to +125 ? c supply voltage on v dd relative to gnd .......?0.5 v to +3.6 v supply voltage on v ddq relative to gnd ...... ?0.5 v to +v dd dc voltage applied to outputs in tristate ...........................................?0.5 v to v ddq + 0.5 v dc input voltage ................................. ?0.5 v to v dd + 0.5 v current into outputs (low) ........................................ 20 ma static discharge voltage (mil-std-883, method 3015) ................................. > 2001 v latch up current ..................................................... > 200 ma operating range range ambient temperature v dd v ddq commercial 0 c to +70 c 2.5 v ? 5% / + 5% 2.5 v ? 5% to v dd electrical characteristics over the operating range parameter [13, 14] description test conditions min max unit v dd power supply voltage 2.375 2.625 v v ddq i/o supply voltage for 2.5 v i/o 2.375 v dd v v oh output high voltage for 2.5 v i/o, i oh = ? ?1.0 ma 2.0 ? v v ol output low voltage for 2.5 v i/o, i ol = ? 1.0 ma ? 0.4 v v ih input high voltage [13] for 2.5 v i/o 1.7 v dd + 0.3 v v il input low voltage [13] for 2.5 v i/o ?0.3 0.7 v i x input leakage current except zz and mode gnd ? v i ? v ddq ?5 5 ? a input current of mode input = v ss ?30 ? a input = v dd ?5 ? a input current of zz input = v ss ?5 ? ? a input = v dd ?30 ? a i oz output leakage current gnd ? v i ? v ddq, output disabled ?5 5 ? a i dd v dd operating supply current v dd = max, i out = 0 ma, f = f max = 1/t cyc 6.5 ns cycle, 133 mhz ?305ma i sb1 automatic ce power-down current ? ttl inputs v dd = max, device deselected, v in ? v ih or v in ? v il , f = f max , inputs switching 6.5 ns cycle, 133 mhz ?170ma i sb2 automatic ce power-down current ? cmos inputs v dd = max, device deselected, v in ? 0.3 v or v in > v dd ? 0.3 v, f = 0, inputs static 6.5 ns cycle, 133 mhz ?120ma i sb3 automatic ce power-down current ? cmos inputs v dd = max, device deselected, v in ? 0.3 v or v in > v ddq ? 0.3 v, f = f max , inputs switching 6.5 ns cycle, 133 mhz ?170ma i sb4 automatic ce power-down current ? ttl inputs v dd = max, device deselected, v in ? v dd ? 0.3 v or v in ? 0.3 v, f = 0, inputs static 6.5 ns cycle, 133 mhz ?135ma notes 13. overshoot: v ih(ac) < v dd +1.5 v (pulse width less than t cyc /2). undershoot: v il(ac) > ?2 v (pulse width less than t cyc /2). 14. t power-up : assumes a linear ramp from 0 v to v dd(min) within 200 ms. during this time v ih < v dd and v ddq < v dd .
cy7c1471v25 document number: 38-05287 rev. *p page 11 of 23 capacitance parameter [15] description test conditions 100-pin tqfp max unit c address address input capacitance t a = 25 ? c, f = 1 mhz, v dd = 2.5 v, v ddq = 2.5 v 6 pf c data data input capacitance 5 pf c ctrl control input capacitance 8 pf c clk clock input capacitance 6 pf c io input-output capacitance 5 pf thermal resistance parameter [15] description test conditions 100-pin tqfp package unit ? ja thermal resistance (junction to ambient) test conditions follow standard test methods and procedures for measuring thermal impedance, according to eia/jesd51. 24.63 ? c/w ? jc thermal resistance (junction to case) 2.28 ? c/w ac test loads and waveforms figure 2. ac test loads and waveforms output r = 1667 ? r = 1538 ? 5pf including jig and scope (a) (b) output r l = 50 ? z 0 = 50 ? v l = 1.25 v 2.5 v all input pulses v ddq gnd 90% 10% 90% 10% ? 1 ns ? 1 ns (c) 2.5 v i/o test load note 15. tested initially and after any design or process change that may affect these parameters.
cy7c1471v25 document number: 38-05287 rev. *p page 12 of 23 switching characteristics over the operating range parameter [16, 17] description 133 mhz unit min max t power v dd (typical) to the first access [18] 1?ms clock t cyc clock cycle time 7.5 ? ns t ch clock high 2.5 ? ns t cl clock low 2.5 ? ns output times t cdv data output valid after clk rise ? 6.5 ns t doh data output hold after clk rise 2.5 ? ns t clz clock to low z [19, 20, 21] 3.0 ? ns t chz clock to high z [19, 20, 21] ?3.8ns t oev oe low to output valid ? 3.0 ns t oelz oe low to output low z [19, 20, 21] 0?ns t oehz oe high to output high z [19, 20, 21] ?3.0ns setup times t as address setup before clk rise 1.5 ? ns t als adv/ld setup before clk rise 1.5 ? ns t wes we , bw x setup before clk rise 1.5 ? ns t cens cen setup before clk rise 1.5 ? ns t ds data input setup before clk rise 1.5 ? ns t ces chip enable setup before clk rise 1.5 ? ns hold times t ah address hold after clk rise 0.5 ? ns t alh adv/ld hold after clk rise 0.5 ? ns t weh we , bw x hold after clk rise 0.5 ? ns t cenh cen hold after clk rise 0.5 ? ns t dh data input hold after clk rise 0.5 ? ns t ceh chip enable hold after clk rise 0.5 ? ns notes 16. timing reference level is 1.25 v when v ddq = 2.5 v 17. test conditions shown in (a) of figure 2 on page 11 unless otherwise noted. 18. this part has a voltage regulator internally; t power is the time that the power needs to be supplied above v dd(minimum) initially, before a read or write operation can be initiated. 19. t chz , t clz ,t oelz , and t oehz are specified with ac test conditions shown in part (b) of figure 2 on page 11 . transition is measured 200 mv from steady-state voltage. 20. at any supplied voltage and temperature, t oehz is less than t oelz and t chz is less than t clz to eliminate bus contention between srams when sharing the same data bus. these specifications do not im ply a bus contention condition, but reflect pa rameters guaranteed over worst case user condi tions. device is designed to achieve high z before low z under the same system conditions. 21. this parameter is sampled and not 100% tested.
cy7c1471v25 document number: 38-05287 rev. *p page 13 of 23 switching waveforms figure 3. read/write timing [22, 23, 24] write d(a1) 123 456789 clk t cyc t cl t ch 10 ce t ceh t ces we cen t cenh t cens bw x adv/ld t ah t as address a1 a2 a3 a4 a5 a6 a7 t dh t ds dq c ommand t clz d(a1) d(a2) q(a4) q(a3) d(a2+1) t doh t chz t cdv write d(a2) burst write d(a2+1) read q(a3) read q(a4) burst read q(a4+1) write d(a5) read q(a6) write d(a7) deselect oe t oev t oelz t oehz dont care undefined d(a5) t doh q(a4+1) d(a7) q(a6) notes 22. for this waveform zz is tied low. 23. when ce is low, ce 1 is low, ce 2 is high, and ce 3 is low. when ce is high, ce 1 is high, ce 2 is low or ce 3 is high. 24. order of the burst sequence is determined by the status of the mode (0 = linear, 1 = interleaved). burst operations are opti onal.
cy7c1471v25 document number: 38-05287 rev. *p page 14 of 23 figure 4. nop, st all and deselect cycles [25, 26, 27] switching waveforms (continued) read q(a3) 456 78910 a3 a4 a5 d(a4) 123 clk ce we cen bw [a:d] adv/ld address dq c ommand write d(a4) stall write d(a1) read q(a2) stall nop read q(a5) deselect continue deselect dont care undefined t chz a1 a2 q(a2) d(a1) q(a3) t doh q(a5) notes 25. for this waveform zz is tied low. 26. when ce is low, ce 1 is low, ce 2 is high, and ce 3 is low. when ce is high, ce 1 is high, ce 2 is low or ce 3 is high. 27. the ignore clock edge or sta ll cycle (clock 3) illustrates cen being used to create a pause. a write is not performed during this cycle.
cy7c1471v25 document number: 38-05287 rev. *p page 15 of 23 figure 5. zz mode timing [28, 29] switching waveforms (continued) t zz i supply clk zz t zzrec a ll inputs (except zz) dont care i ddzz t zzi t rzzi outputs (q) high-z deselect or read only notes 28. device must be deselected when entering zz mode. see "truth table" on page 8 for all possible signal conditions to deselect the device. 29. dqs are in high z when exiting zz sleep mode.
cy7c1471v25 document number: 38-05287 rev. *p page 16 of 23 ordering code definitions ordering information cypress offers other versions of this type of product in different co nfigurations and features. the following table contains on ly the list of parts that are currently available. for a complete listing of all options, visit the cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products , or contact your loca l sales representative. cypress maintains a worldwide network of offices, solution center s, manufacturer's representatives and distributors. to find th e office closest to you, visit us at http://www.cypress.com /go/datasheet/offices . speed (mhz) ordering code package diagram part and package type operating range 133 CY7C1471V25-133AXC 51-85050 100-pin tqfp (14 20 1.4 mm) pb-free commercial temperature range: c = commercial pb-free package type: a = 100-pin tqfp speed grade: 133 mhz v25 = 2.5 v v dd part identifier: 1471 = ft, 2 mb 36 (72 mb) technology code: c = cmos marketing code: 7 = sram company id: cy = cypress c c 1471 v25 - 133 a cy 7 x
cy7c1471v25 document number: 38-05287 rev. *p page 17 of 23 package diagrams figure 6. 100-pin tqfp (14 20 1.4 mm) a100ra package outline, 51-85050 51-85050 *d
cy7c1471v25 document number: 38-05287 rev. *p page 18 of 23 acronyms document conventions units of measure acronym description cmos complementary metal oxide semiconductor ce chip enable cen clock enable i/o input/output jedec joint electron devices engineering council nobl no bus latency oe output enable sram static random access memory tqfp thin quad flat pack ttl transistor-transistor logic we write enable symbol unit of measure c degree celsius mhz megahertz a microampere ma milliampere mm millimeter ms millisecond mv millivolt ns nanosecond ? ohm % percent pf picofarad vvolt wwatt
cy7c1471v25 document number: 38-05287 rev. *p page 19 of 23 errata this section describes the ram9 sync/nobl zz pin, jtag and chip enable issues. details include trigger conditions, the devices affected, proposed workaround and silicon revision applicability. please contact your local cypress sales representative if you have further questions. part numbers affected product status all of the devices in the ram9 72mb sync/nobl family are qualified and available in production quantities. ram9 sync/nobl zz pin issues errata summary the following table defines the errata applicable to available ram9 72mb sync/nobl family devices. 1. zz pin issue problem definition the problem occurs only when the device is operated in the no rmal mode with zz pin left floating. the zz pin on the sram device does not have an internal pull-do wn resistor. switching noise in the system may cause the sram to recognize a high on the zz input, which may cause the sram to enter sleep mode. this could result in incorrect or undesirable operation of the sram. trigger conditions device operated with zz pin left floating. scope of impact when the zz pin is left floating, the device delivers incorrect data. workaround tie the zz pin externally to ground. fix status fix was done for the 72mb ram9 synchronous srams and 72m ram9 nobl srams devices. fixed devices have a new revision. the following table lists the devices affected and the new revision after the fix. density & revision package type operating range 72mb-ram9 nobl srams: cy7c147*, cy7c147*v25 all packages commercial/ industrial item issues description device fix status 1. zz pin when asserted high, the zz pin places device in a ?sleep? condition with data integrity preserved.the zz pin currently does not have an internal pull-down resistor and hence cannot be left floating externally by the user during normal mode of operation. 72m-ram9 (90nm) for the 72m ram9 (90 nm) devices, this issue was fixed in the new revision. please contact your local sales rep for availability. table 1. list of affected devices and the new revision revision before the fix new revision after the fix cy7c147* cy7c147*b cy7c147*v25 cy7c147*bv25
cy7c1471v25 document number: 38-05287 rev. *p page 20 of 23 document history page document title: cy7c1471v25, 72-mbit (2 m 36) flow-through sram with nobl? architecture document number: 38-05287 rev. ecn no. issue date orig. of change description of change ** 114674 08/06/02 pks new data sheet. *a 121522 01/27/03 cjm changed status from advanced information to preliminary. updated features (for package offering). updated ordering information (updated part numbers). *b 223721 see ecn njy updated features (removed 150 mhz frequency related information). updated functional description (removed 150 mhz frequency related information). updated logic block diagram (splitted logic block diagram into three logic block diagrams). updated selection guide (removed 150 mhz frequency related information). updated functional overview (removed 150 mhz frequency related information). updated boundary scan exit order (replaced tbd with values for all packages). updated electrical characteristics (removed 150 mhz frequency related information, replaced tbd with values for maximum values of i dd , i sb1 , i sb2 , i sb3 , i sb4 parameters). updated capacitance (replaced tbd with values for all packages). updated thermal resistance (replaced tbd with values for all packages). updated switching characteristics (removed 150 mhz frequency related infor- mation). updated switching waveforms . updated ordering information (updated part numbers). updated package diagrams (spec 51-85165 (changed revision from ** to *a), removed spec 51-85143 and included spec 51-85167 for 209-ball bga package, removed spec 51-85115 (corresponding to 119-bga package)). *c 235012 see ecn ryq minor change (to match on the spec system and external web). *d 243572 see ecn njy updated pin configurations (updated figure ?165-ball fbga (15 17 1.40 mm) pinout (3 chip enable with jtag)? (changed ball h2 from v dd to nc), updated figure ?209-ball bga (14 22 1.76 mm) pinout? (changed ball r11 from dqpa to dqpe)). updated capacitance (splitted c in parameter into c address , c data , c clk parameters and also updated the values). *e 299511 see ecn syt updated features (removed 117 mhz frequency related information). updated selection guide (removed 117 mhz frequen cy related information). updated electrical characteristics (removed 117 mhz frequency related information). updated thermal resistance (changed value of ? ja from 16.8 ? c/w to 24.63 ? c/w, changed value of ? jc from 3.3 ? c/w to 2.28 ? c/w for 100-pin tqfp package). updated switching characteristics (removed 117 mhz frequency related information). updated ordering information (updated part numbers (removed 117 mhz frequency related information, added pb-free information for 100-pin tqfp, 165-ball fbga and 209-ball bga packages), added comment of ?pb-free bg packages availability? below the ordering information).
cy7c1471v25 document number: 38-05287 rev. *p page 21 of 23 *f 323039 see ecn pci updated pin configurations (address expansion pins/balls in the pinouts for all packages are modified as per jedec standard, changed package name from 209-ball pbga to 209-ball fbga on page# 7). updated pin definitions (added address expansion pins in the pin definitions table). updated operating range (added industrial temperature range). updated electrical characteristics (updated test conditions of v ol , v oh parameters). updated ordering information (updated part numbers (added pb-free information in the ordering information table), removed comment of ?pb-free bg packages availability? below the ordering information). *g 416221 see ecn nxr changed status from preliminary to final. changed address of cypress semicondu ctor corporation from ?3901 north first street? to ?198 champion court?. updated electrical characteristics (updated note 14 (changed v ih < v dd to v ih < v dd ), changed description of i x parameter from input load current except zz and mode to input leakage current except zz and mode, changed minimum value of i x parameter (corresponding to input current of mode (input = v ss )) from ?5 ? a to ?30 ? a, changed maximum value of i x parameter (corresponding to input current of mode (input = v dd )) from 30 ? a to 5 ? a, changed minimum value of i x parameter (corresponding to input current of zz (input = v ss )) from ?30 ? a to ?5 ? a, changed maximum value of i x parameter (corresponding to input current of zz (input = v dd )) from 5 ? a to 30 ? a). updated ordering information (updated part numbers, replaced package name column with package diagram in the ordering information table). *h 472335 see ecn vkn updated pin configurations (updated figure ?209-ball fbga (14 22 1.76 mm) pinout? (correct ed the ball name for h9 to v ss from v ssq )). updated tap ac switching characteristics (changed minimum value of t th , t tl parameters from 25 ns to 20 ns, changed maximum value of t tdov parameters from 5 ns to 10 ns). updated maximum ratings (added the maximum rating for supply voltage on v ddq relative to gnd). updated ordering information (updated part numbers). *i 1274732 see ecn vkn / aesa updated switching waveforms (updated figure 4 (corrected typo)). *j 2897278 03/22/2010 njy updated ordering information (removed obsolete part numbers from ordering information table). updated package diagrams . *k 3034798 09/21/2010 njy added ordering code definitions . added acronyms and units of measure . minor edits and updated in new template. *l 3353119 08/24/2011 prit updated functional description (updated note as ?for best practice recommendations, refer to sram system guidelines .?). updated package diagrams (spec 51-85050 (changed revision from *c to *d), spec 51-85165 (changed revision from *b to *c)). document history page (continued) document title: cy7c1471v25, 72-mbit (2 m 36) flow-through sram with nobl? architecture document number: 38-05287 rev. ecn no. issue date orig. of change description of change
cy7c1471v25 document number: 38-05287 rev. *p page 22 of 23 *m 3633894 06/01/2012 prit updated features (removed cy7c1473v25, cy7c1475v25 related information, removed 165-ball fbga package, 209-ball fbga package related information). updated functional description (removed cy7c1473v25, cy7c1475v25 related information, removed the note ?for best practice recommendations, refer to sram system guidelines .? and its reference). updated selection guide (removed 100 mhz frequency related information). removed logic block diagram ? cy7c1473v25. removed logic block diagram ? cy7c1475v25. updated pin configurations (removed cy7c1473v25, cy7c1475v25 related information, removed 165-ball fbga package, 209-ball fbga package related information). updated pin definitions (removed jtag related information). updated functional overview (removed cy7c1473v25, cy7c1475v25 related information). updated truth table (removed cy7c1473v25, cy7c1475v25 related information). removed truth table for read/write (corresponding to cy7c1473v25, cy7c1475v25). removed ieee 1149.1 serial boundary scan (jtag). removed tap controller state diagram. removed tap controller block diagram. removed tap timing. removed tap ac switching characteristics. removed 1.8 v tap ac test conditions. removed 1.8 v tap ac output load equivalent. removed 2.5 v tap ac test conditions. removed 2.5 v tap ac output load equivalent. removed tap dc electrical charac teristics and operating conditions. removed identification register definitions. removed scan register sizes. removed identi fication codes. removed boundary scan exit order (corresponding to cy7c1471v25, cy7c1473v25, cy7c1475v25). updated operating range (removed industrial temperature range). updated electrical characteristics (removed 100 mhz frequency related information). updated capacitance (removed 165-ball fbga package, 209-ball fbga package related information). updated thermal resistance (removed 165-ball fbga package, 209-ball fbga package related information). updated switching characteristics (removed 100 mhz frequency related information). updated package diagrams (removed 165-ball fbga package (spec 51-85165), 209-ball fbga package related information (spec 51-85167)). *n 3749841 09/20/2012 prit no technical updates. completing sunset review. *o 3970182 04/18/2013 prit updated features (removed 1.8 v related information). updated electrical characteristics (removed 1.8 v related information). updated ac test loads and waveforms (removed 1.8 v related information in figure 2 ). updated switching characteristics (removed 1.8 v related information in note 16 ). added errata . *p 4038218 06/24/2013 prit added errata footnotes. updated in new template. document history page (continued) document title: cy7c1471v25, 72-mbit (2 m 36) flow-through sram with nobl? architecture document number: 38-05287 rev. ecn no. issue date orig. of change description of change
document number: 38-05287 rev. *p revised june 24, 2013 page 23 of 23 nobl and no bus latency are trademarks of cypress semiconductor corporation. zbt is a trademark of integrated device technology , inc. all products and company names mentioned in this document may be the trademarks of their respective holders. cy7c1471v25 ? cypress semiconductor corporation, 2002-2013. the information contained herein is subject to change without notice. cypress s emiconductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress product. nor does it convey or imply any license under patent or other rights. cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement wi th cypress. furthermore, cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. any source code (software and/or firmware) is owned by cypress semiconductor corporation (cypress) and is protected by and subj ect to worldwide patent protection (united states and foreign), united states copyright laws and internatio nal treaty provisions. cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of, and compile the cypress source code and derivative works for the sole purpose of creating custom software and or firmware in su pport of licensee product to be used only in conjunction with a cypress integrated circuit as specified in the applicable agreement. any reproduction, modification, translation, compilation, or repre sentation of this source code except as specified above is prohibited without the express written permission of cypress. disclaimer: cypress makes no warranty of any kind, express or implied, with regard to this material, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose. cypress reserves the right to make changes without further notice to t he materials described herein. cypress does not assume any liability arising out of the application or use of any product or circuit described herein. cypress does not authori ze its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. the inclusion of cypress? prod uct in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies cypress against all charges. use may be limited by and subject to the applicable cypress software license agreement. sales, solutions, and legal information worldwide sales and design support cypress maintains a worldwide network of offices, solution center s, manufacturer?s representatives, and distributors. to find t he office closest to you, visit us at cypress locations . products automotive cypress.co m/go/automotive clocks & buffers cypress.com/go/clocks interface cypress. com/go/interface lighting & power control cypress.com/go/powerpsoc cypress.com/go/plc memory cypress.com/go/memory psoc cypress.com/go/psoc touch sensing cyp ress.com/go/touch usb controllers cypress.com/go/usb wireless/rf cypress.com/go/wireless psoc ? solutions psoc.cypress.com/solutions psoc 1 | psoc 3 | psoc 4 | psoc 5lp cypress developer community community | forums | blogs | video | training technical support cypress.com/go/support

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